Launch of high-resolution radiation-resistant silicon detector development and industrial application project
[ China Instrument Network Instrument Research and Development ] Recently, the national key research and development plan "high-resolution radiation-resistant silicon detector research and development and industrial application" project was officially launched.
Scientific instruments and equipment are the cornerstone of scientific research and technological innovation, and an important guarantee for economic and social development and national defense security. In order to effectively improve the independent innovation capability and equipment level of China's scientific instruments and equipment, promote industrial upgrading and support the implementation of innovation-driven development strategies, China has launched a national key research and development plan.
As a key core technology of modern science and technology, ray detection technology has a wide application space in the fields of public security equipment, national defense construction, nuclear energy development and utilization. At present, most of the products in China's silicon radiation detector market are monopolized by foreign countries, and urgent need in key areas. Make a key breakthrough. As a core component of special defense radiation measuring equipment, high-voltage silicon detector can broaden the dynamic range of pulsed radiation measurement, and has good resolution for neutrons, gamma rays, etc., in nuclear radiation monitoring, high-energy particle detection, X-ray diffractometer , security and other applications are widely used.
To this end, Sichuan Yijing Technology Group took the lead in declaring that the Materials Research Institute of China Academy of Engineering Physics, the Institute of Electrical Engineering of China Academy of Engineering Physics and Jiangsu Shangfei Optoelectronics Technology Co., Ltd. participated in the high-resolution radiation-resistant silicon detector project. The development of the Ministry of Science and Technology was officially approved in 2018. The central government financed 4.28 million yuan and the implementation period was 3 years.
The high-resolution radiation-resistant silicon detector project will focus on key technologies such as surface passivation and ion implantation to obtain key technologies for high-performance silicon radiation detection with independent intellectual property rights, from basic research, process control, device development, and products. R & D, industrialization and other stages to enhance core competitiveness, drive the development of related industries, the main tasks include the development of high-voltage radiation-resistant silicon detectors, high-performance X-ray detectors for public security applications, large-area X-ray silicon detectors.
The evaluation indicators of the project mainly include detection area ≥5cm×5cm; position resolution ≤100μm; leakage current density ≤2nA/cm2@depletion voltage; detector working voltage ≥600V; anti-irradiation index ≥1×1015nep/cm2. The product should pass the reliability test when it is completed, the average time between failures is ≥5000 hours, and the technical readiness is up to level 9. Identify the number of intellectual property rights such as invention patents, standards and software copyrights; form mass production capacity, and clarify the sales volume and sales during project acceptance.
The implementation of the project will further enhance the core competitiveness of related fields, break the international technical blockade of China, narrow the gap with international advanced technology, drive the development of related industries, and realize China's own control of related industry development and national security with independent technological innovation. lifeline. Next, the team will focus on the silicon surface passivation process to improve device performance and irradiance by controlling the thickness and quality of the oxide film on the silicon surface.
(Source: Science and Technology Daily, Ministry of Science and Technology, Instrument Information Network)
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